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Category: IGBTtransistorDescription: IGBT Module, 6 packs, Fuji Electric V - series, 6th generation field block U/U4 series, 5th generation field block S - series, 4th generation NPT injection module. The maximum collector current (Ic) value per crystal is rated. IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistors or IGBTs are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.10751+$1103.208710+$1093.179525+$1088.164950+$1083.1504100+$1078.1358150+$1073.1212250+$1068.1066500+$1063.0920 -
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Category: IGBTtransistorDescription: IGBT Module, 6 packs, Fuji Electric V - series, 6th generation field block U/U4 series, 5th generation field block S - series, 4th generation NPT injection module. The maximum collector current (Ic) value per crystal is rated. IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistors or IGBTs are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.96311+$636.232910+$613.908950+$611.1184100+$608.3279150+$603.8631250+$599.9564500+$596.04971000+$591.5849 -
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Category: IGBTtransistorDescription: IGBT 模块，6 包，Fuji Electric V - 系列，第 6 代现场挡块 U/U4 系列，第 5 代现场挡块 S - 系列，第 4 代 NPT 注 模块内每晶体的最大集电极电流 (Ic) 值是额定的。 IGBT 分立件和模块，Fuji Electric 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。6579
